P-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• ESD protected Up To 3KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
• DC-DC Converters
• Motor Control
• Power management functions
• Analog Switch
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 20 V |
|VGS| (±V) | 12 ±V |
|IDS| @TA = +25°C (A) | 6 |
PD @TA = +25°C (W) | 2 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 35 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 45 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 62 mΩ |
|VGS(TH)| Min (V) | 0.4 V |
|VGS(TH)| Max (V) | 1.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 15.4 nC |
CISS Typ (pF) | 1610 pF |
CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2457 | 2020-05-27 | 2020-08-27 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, and Change to Palladium Coated Copper Bond Wire, and New Mold Compound on Select Automotive Products |