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U-WLB1010-4.pngP-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the onstate
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Battery Management
• Load Switch
• Battery Protection
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 6 ±V |
| |IDS| @TA = +25°C (A) | 4.1 |
| PD @TA = +25°C (W) | 1.6 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 47 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 60 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1.2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 2.3 nC |
| CISS Typ (pF) | 218 pF |
| CISS Condition @|VDS| (V) | 10 V |
