Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMP2056UCA4

P-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. It is a high-performance MOSFET in ultra-small 0.8mm x 0.8mm package.

Feature(s)

  • Ultra-Small 0.8mm x 0.8mm Package
  • Built-in G-S Protection Diode Against ESD
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Portable applications
  • Load switches
  • Power-management functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 4.4
PD @TA = +25°C (W) 1.87
RDS(ON)Max@ VGS(4.5V)(mΩ) 64 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 80 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 130 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1.1 V
QG Typ @ |VGS| = 4.5V (nC) 4.9 nC
QG Typ @ |VGS| = 10V (nC) 8.4 (@ 8V) nC
CISS Typ (pF) 437 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf