P-Channel Enhancement Mode MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the on-state resistance RDS(ON) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 16 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 4.8 |
| |IDS| @TC = +25°C (A) | - |
| PD @TA = +25°C (W) | 1.3 |
| PD @TC = +25°C (W) | - |
| RDS(ON)Max@ VGS(10V)(mΩ) | - mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 39 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 65 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 103 mΩ |
| |VGS(TH)| Min (V) | 0.3 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 11 nC |
| QG Typ @ |VGS| = 10V (nC) | - nC |
| CISS Typ (pF) | 973 pF |
| CISS Condition @|VDS| (V) | 10 V |
