Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT23.pngP-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TC = +25°C (A) | 4.6 |
| PD @TA = +25°C (W) | 1.4 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 44 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 57 mΩ |
| |VGS(TH)| Max (V) | 0.95 V |
| QG Typ @ |VGS| = 4.5V (nC) | 8.2 nC |
| QG Typ @ |VGS| = 10V (nC) | 17.8 (@8V) nC |
| CISS Typ (pF) | 118 pF |
| CISS Condition @|VDS| (V) | 10 V |
