P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with really small footprint.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 3.4 |
| PD @TA = +25°C (W) | 1.4 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 100 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 165 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 600 mΩ |
| |VGS(TH)| Min (V) | 0.7 V |
| |VGS(TH)| Max (V) | 1.2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 1.1 nC |
| CISS Typ (pF) | 152 pF |
| CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2446 | 2020-01-24 | 2020-01-24 | Change Date Code Marking Information from “YM” (Year/Month) to “YW” (Year/Week) |
