P-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with really small footprint.
AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 20 V |
|VGS| (±V) | 12 ±V |
|IDS| @TA = +25°C (A) | 3.4 |
PD @TA = +25°C (W) | 1.4 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 100 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 165 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 600 mΩ |
|VGS(TH)| Min (V) | 0.7 V |
|VGS(TH)| Max (V) | 1.2 V |
QG Typ @ |VGS| = 4.5V (nC) | 1.1 nC |
CISS Typ (pF) | 152 pF |
CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2446 | 2020-01-24 | 2020-01-24 | Change Date Code Marking Information from “YM” (Year/Month) to “YW” (Year/Week) |