20V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the footprint in handheld and Mobile application. It can be used to replace many small signals MOSFET with as really small footprint.
Compliance (Only Automotive supports PPAP) | Standard |
---|---|
CISS Condition @|VDS| (V) | 10 |
CISS Typ (pF) | 121 |
Compliance (Only Automotive(Q) supports PPAP) | Standard |
ESD Diodes (Y|N) | Yes |
|IDS| @TA = +25°C (A) | 2.9 |
PD @TA = +25°C (W) | 1.13 |
Polarity | P |
QG Typ @ |VGS| = 4.5V (nC) | 1.1 |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 750 |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 174 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 105 |
|VDS| (V) | 20 |
|VGS| (±V) | 12 |
|VGS(TH)| Max (V) | 1.2 |
|VGS(TH)| Min (V) | 0.7 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2556 | 2021-11-22 | 2022-05-22 | Device End of Life (EOL) |