NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive supports PPAP) | Automotive (Q) |
---|---|
CISS Condition @|VDS| (V) | 10 |
CISS Typ (pF) | 250 |
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
ESD Diodes (Y|N) | No |
|IDS| @TA = +25°C (A) | 2.6 |
PD @TA = +25°C (W) | 1.08 |
Polarity | P |
Compliance (Only Automotive supports PPAP) | Automotive (Q) |
QG Typ @ |VGS| = 4.5V (nC) | 4.3 |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 225 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 110 |
|VDS| (V) | 20 |
|VGS| (±V) | 12 |
|VGS(TH)| Max (V) | 1.25 |
|VGS(TH)| Min (V) | 0.45 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2457 | 2020-05-27 | 2020-08-27 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, and Change to Palladium Coated Copper Bond Wire, and New Mold Compound on Select Automotive Products |