Diodes Incorporated — Analog and discrete power solutions
X2 DFN0806 3

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DMP22D4UFA

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity P
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 8 ±V
    |IDS| @TA = +25°C (A) 0.33
    PD @TA = +25°C (W) 0.4
    RDS(ON)Max@ VGS(4.5V)(mΩ) 1900 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 2400 mΩ
    RDS(ON)Max@ VGS(1.8V)(mΩ) 3400 mΩ
    |VGS(TH)| Min (V) 0.4 V
    |VGS(TH)| Max (V) 1 V
    QG Typ @ |VGS| = 4.5V (nC) 0.4 nC
    CISS Typ (pF) 28.7 pF
    CISS Condition @|VDS| (V) 15 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC