Diodes Incorporated — Analog and discrete power solutions
U WLB1515 9

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DMP2540UCB9 (NRND)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 25V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) No
CISS Condition @|VDS| (V) N/A
CISS Typ (pF) 342
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) N/A
PD @TA = +25°C (W) 1.8
Polarity P
QG Typ @ |VGS| = 10V (nC) N/A
QG Typ @ |VGS| = 4.5V (nC) 4.8
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 60
RDS(ON)Max@ VGS(10V)(mΩ) N/A
RDS(ON)Max@ VGS(2.5V)(mΩ) 50
RDS(ON)Max@ VGS(4.5V)(mΩ) 40
|VDS| (V) 25
|VGS| (±V) 6
|VGS(TH)| Max (V) 1.1
|VGS(TH)| Min (V) 0.4

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2556 2021-11-22 2022-05-22 Device End of Life (EOL)
PCN-2507 2021-02-03 2021-05-03 Qualification of Additional Wafer Backside Material Supplier
PCN-2318 2018-01-22 2018-01-22 Device End of Life (EOL)