NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 25V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
Compliance (Only Automotive supports PPAP) | No |
---|---|
CISS Condition @|VDS| (V) | N/A |
CISS Typ (pF) | 342 |
ESD Diodes (Y|N) | Yes |
|IDS| @TA = +25°C (A) | N/A |
PD @TA = +25°C (W) | 1.8 |
Polarity | P |
QG Typ @ |VGS| = 10V (nC) | N/A |
QG Typ @ |VGS| = 4.5V (nC) | 4.8 |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 60 |
RDS(ON)Max@ VGS(10V)(mΩ) | N/A |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 50 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 40 |
|VDS| (V) | 25 |
|VGS| (±V) | 6 |
|VGS(TH)| Max (V) | 1.1 |
|VGS(TH)| Min (V) | 0.4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2556 | 2021-11-22 | 2022-05-22 | Device End of Life (EOL) |
PCN-2507 | 2021-02-03 | 2021-05-03 | Qualification of Additional Wafer Backside Material Supplier |
PCN-2318 | 2018-01-22 | 2018-01-22 | Device End of Life (EOL) |