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DMP26M1UFG

20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Datasheet

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Description

This MOSFET is designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Low RDS(on) – ensures on state losses are minimized
Small form factor, thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	10 ±V
\|I_DS\| @T_C = +25°C (A)	71
P_D @T_A = +25°C (W)	3
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	5.5 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	7.5 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	12 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	75 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	164 nC
C_ISS Typ (pF)	5392 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMP26M1UFG.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile