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PowerDI3333-8.pngNRND = Not Recommended for New Design
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This new generation 30V P Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally use Notebook battery power management and Loadswitch.
| Compliance (Only Automotive supports PPAP) | DMP3008SFGQ |
|---|---|
| CISS Condition @|VDS| (V) | N/A |
| CISS Typ (pF) | N/A |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 8.6 |
| PD @TA = +25°C (W) | 2.2 |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | 47 |
| QG Typ @ |VGS| = 4.5V (nC) | 23 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | 17 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 25 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 2.1 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2456 | 2020-05-29 | 2020-08-29 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products. |
| PCN-2389 | 2019-02-05 | 2019-08-05 | Device End of Life |
