Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMP3011SPSW

30V P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • <1.1mm Package Profile – Ideal for Thin Applications
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC converters
  • Power management functions
  • Analog switches

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 25 ±V
|IDS| @TA = +25°C (A) 14
|IDS| @TC = +25°C (A) 65
PD @TA = +25°C (W) 2.8
RDS(ON)Max@ VGS(10V)(mΩ) 10 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 18 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 25(@5v) nC
QG Typ @ |VGS| = 10V (nC) 46 nC
CISS Typ (pF) 2380 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf