Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
PowerDI3333-8.pngNRND = Not Recommended for New Design
30V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Automotive |
|---|---|
| CISS Condition @|VDS| (V) | 15 |
| CISS Typ (pF) | 2246 |
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Configuration | Single |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 11.5 |
| PD @TA = +25°C (W) | 2.2 |
| Polarity | P |
| Compliance (Only Automotive supports PPAP) | Automotive (Q) |
| QG Typ @ |VGS| = 10V (nC) | 41 |
| QG Typ @ |VGS| = 4.5V (nC) | 20.5 (@5V) |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(10V)(mΩ) | 10 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 18 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 25 |
| |VGS(TH)| Max (V) | 3 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2533 | 2021-09-02 | 2022-03-02 | Device End of Life (EOL) |
| PCN-2522 | 2021-08-24 | 2021-11-24 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products |
