NRND = Not Recommended for New Design
30V P-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
CISS Condition @|VDS| (V) | 15 |
---|---|
CISS Typ (pF) | 2246 |
Compliance (Only Automotive Supports PPAP) | No |
ESD Diodes (Y|N) | Yes |
|IDS| @TA = +25°C (A) | 11.5 |
PD @TA = +25°C (W) | 1.94 |
Polarity | P |
QG Typ @ |VGS| = 10V (nC) | 41 |
QG Typ @ |VGS| = 4.5V (nC) | N/A |
AEC Qualified | No |
RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
RDS(ON)Max@ VGS(10V)(mΩ) | 10 |
RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 18 |
|VDS| (V) | 30 |
|VGS| (±V) | 25 |
|VGS(TH)| Max (V) | 3 |