DMP3017SFV (NRND)

NRND = Not Recommended for New Design

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

Contact Sales

Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Low R_DS(ON) – ensures on-state losses are minimized
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
ESD Protected Gate

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	No
C_ISS Condition @\|V_DS\| (V)	15
C_ISS Typ (pF)	2246
ESD Diodes (Y\|N)	Yes
\|I_DS\| @T_A = +25°C (A)	11.5
P_D @T_A = +25°C (W)	1.94
Polarity	P
Q_G Typ @ \|V_GS\| = 10V (nC)	41
Q_G Typ @ \|V_GS\| = 4.5V (nC)	N/A
AEC Qualified	No
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(10V)(mΩ)	10
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	18
\|V_DS\| (V)	30
\|V_GS\| (±V)	25
\|V_GS(TH)\| Max (V)	3

Technical Documents

SPICE Model

DMP3017SFV.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2389	2019-02-05	2019-08-05	Device End of Life