NRND = Not Recommended for New Design
30V P-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Compliance (Only Automotive supports PPAP) | Automotive |
---|---|
CISS Condition @|VDS| (V) | 15 |
CISS Typ (pF) | 2147 |
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Configuration | Single |
ESD Diodes (Y|N) | Yes |
|IDS| @TA = +25°C (A) | 11 |
PD @TA = +25°C (W) | 1.9 |
Polarity | P |
Compliance (Only Automotive supports PPAP) | Automotive (Q) |
QG Typ @ |VGS| = 10V (nC) | 51 |
QG Typ @ |VGS| = 4.5V (nC) | 28 (@5V) |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(10V)(mΩ) | 12 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 21 |
|VDS| (V) | 30 |
|VGS| (±V) | 25 |
|VGS(TH)| Max (V) | 3 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2533 | 2021-09-02 | 2022-03-02 | Device End of Life (EOL) |