DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
The DIODES™ DMP3056LSDQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | P+P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 6.9 |
PD @TA = +25°C (W) | 2.5 |
RDS(ON)Max@ VGS(10V)(mΩ) | 45 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 65 mΩ |
|VGS(TH)| Max (V) | 2.1 V |
QG Typ @ |VGS| = 4.5V (nC) | 6.8 nC |
QG Typ @ |VGS| = 10V (nC) | 13.7 nC |