P-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 3.3 |
PD @TA = +25°C (W) | 1.3 |
RDS(ON)Max@ VGS(10V)(mΩ) | 90 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 134 mΩ |
|VGS(TH)| Max (V) | 2.1 V |
QG Typ @ |VGS| = 4.5V (nC) | 1 nC |
QG Typ @ |VGS| = 10V (nC) | 2 nC |
CISS Typ (pF) | 300 pF |
CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |