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TSOT26.pngNRND = Not Recommended for New Design
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Standard |
|---|---|
| CISS Typ (pF) | 287 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 2.7 |
| PD @TA = +25°C (W) | 1.08 |
| Polarity | P+P |
| QG Typ @ |VGS| = 10V (nC) | 6.8 |
| QG Typ @ |VGS| = 4.5V (nC) | 3.5 |
| AEC Qualified | No |
| RDS(ON)Max@ VGS(10V)(mΩ) | 95 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 140 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 2.2 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2561 | 2022-02-17 | 2022-08-17 | Device End of Life (EOL) |
