P-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.5 |
PD @TA = +25°C (W) | 1.2 |
RDS(ON)Max@ VGS(10V)(mΩ) | 2400 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 4000 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 16000 mΩ |
|VGS(TH)| Max (V) | 2.3 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.6 nC |
QG Typ @ |VGS| = 10V (nC) | 1.3 nC |
CISS Typ (pF) | 51 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
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PCN-2299 | 2018-03-01 | 2018-06-01 | Additional Qualified (A/T) Assembly Test Site |