P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 40 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 14 |
PD @TA = +25°C (W) | 3.1 |
RDS(ON)Max@ VGS(10V)(mΩ) | 11 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 19 mΩ |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 25 nC |
QG Typ @ |VGS| = 10V (nC) | 52 nC |
CISS Typ (pF) | 2747 pF |
CISS Condition @|VDS| (V) | 20 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2498 | 2021-04-07 | 2021-04-07 | Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products |