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SO-8.pngP-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 40V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to battery Load switching.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 40 V |
| |VGS| (±V) | 25 ±V |
| |IDS| @TA = +25°C (A) | 10.1 |
| PD @TA = +25°C (W) | 1.82 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 11 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 15 mΩ |
| |VGS(TH)| Max (V) | 2.5 V |
| QG Typ @ |VGS| = 4.5V (nC) | 47.5 (@5V) nC |
| CISS Typ (pF) | 4234 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
