Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DMP4047LFDE

40V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 40V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance and 0.6mm profile – ideal for low profile applications . This device is ideally suited to Handheld and lighten application

Application(s)

  • General Purpose Interfacing Switch
  • Load Switching
  • Battery Management Application
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6
PD @TA = +25°C (W) 2.1
RDS(ON)Max@ VGS(10V)(mΩ) 33 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 50 mΩ
|VGS(TH)| Max (V) 2.2 V
QG Typ @ |VGS| = 4.5V (nC) 11.2 nC
QG Typ @ |VGS| = 10V (nC) 23.2 nC
CISS Typ (pF) 1382 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.