Diodes Incorporated — Analog and discrete power solutions
SOT563

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DMP58D1LV

Dual P-Channel Enhancement Mode MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • General purpose interfacing switches
  • Power management functions
  • Analog switches

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P+P
ESD Diodes (Y|N) No
|VDS| (V) 50 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.22@5V
PD @TA = +25°C (W) 0.78
RDS(ON)Max@ VGS(4.5V)(mΩ) 8000@5V mΩ
|VGS(TH)| Min (V) 0.8 V
|VGS(TH)| Max (V) 2.0 V
QG Typ @ |VGS| = 4.5V (nC) 0.6@5V nC
QG Typ @ |VGS| = 10V (nC) 1.2 nC
CISS Typ (pF) 37 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf