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DMPH4009SPSW

40V +175°C P-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Wettable Flank for Improved Optical Inspections
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

DC-DC converters
Power-management functions
Analog switches

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	40 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	83.4
P_D @T_A = +25°C (W)	4.6
P_D @T_C = +25°C (W)	143
R_DS(ON)Max@ V_GS(10V)(mΩ)	11 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	19 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	53 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	112 nC
C_ISS Typ (pF)	5697 pF
C_ISS Condition @\|V_DS\| (V)	20 V

Technical Documents

SPICE Model

DMPH4009SPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf