Diodes Incorporated — Analog and discrete power solutions
PowerDI3333 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI3333-8.png
Back to MOSFET Master Table

DMPH4029LFG

40V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • Low RDS(ON) – Ensures On State Losses Are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 8
PD @TA = +25°C (W) 2.8
RDS(ON)Max@ VGS(10V)(mΩ) 29 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 45 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 17 nC
QG Typ @ |VGS| = 10V (nC) 34 nC
CISS Typ (pF) 1626 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC