Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)

U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)

U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)

Back to MOSFET Master Table

DMS2220LFDB

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • Low On-Resistance
  • 70mΩ @VGS = -4.5V
  • 85mΩ @VGS = -2.5V
  • 86mΩ (typ) @VGS = -1.8V
  • Low Gate Threshold Voltage, -1.3V Max
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Incorporates Low VF Super Barrier Rectifier (SBR®)
  • Low Profile, 0.5mm Max Height
  • Lead Free/RoHS Compliant
  • "Green" Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • Specifications & Technical Documents

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive Supports PPAP) Standard
    Polarity P+SKY
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 12 ±V
    |IDS| @TA = +25°C (A) 3.5
    PD @TA = +25°C (W) 1.4
    RDS(ON)Max@ VGS(4.5V)(mΩ) 95 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 120 mΩ
    |VGS(TH)| Min (V) 0.45 V
    |VGS(TH)| Max (V) 1.3 V
    CISS Typ (pF) 632 pF
    CISS Condition @|VDS| (V) 10 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availablity