Diodes Incorporated — Analog and discrete power solutions
SO 8

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DMT10H009LSSQ

100V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: high-frequency switching, synchronous rectifications, and DC-DC converters.

Feature(s)

  • High Conversion Efficiency
  • Low RDS(ON)—Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMT10H009LSSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • High-frequency switching
  • Synchronous rectifications
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 13
|IDS| @TC = +25°C (A) 48
PD @TA = +25°C (W) 2.5
RDS(ON)Max@ VGS(10V)(mΩ) 9 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 13.8 mΩ
|VGS(TH)| Min (V) 1.3 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 20.2 nC
QG Typ @ |VGS| = 10V (nC) 40.2 nC
CISS Typ (pF) 2309 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf