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DMT10H009LSSQ

100V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: high-frequency switching, synchronous rectifications, and DC-DC converters.

Feature(s)

High Conversion Efficiency
Low R_DS(ON)—Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMT10H009LSSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

High-frequency switching
Synchronous rectifications
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	13
\|I_DS\| @T_C = +25°C (A)	48
P_D @T_A = +25°C (W)	2.5
R_DS(ON)Max@ V_GS(10V)(mΩ)	9 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	13.8 mΩ
\|V_GS(TH)\| Min (V)	1.3 V
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20.2 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	40.2 nC
C_ISS Typ (pF)	2309 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H009LSSQ.spice.txt

Recommended Soldering Techniques

TN1.pdf