DMT10H017LPD: 100V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET (MOSFET Master Table)

Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.

Feature(s)

100% Unclamped Inductive Switching—Ensures More Reliable and Robust End Application
High-Conversion Efficiency
Low R_DS(ON)—Minimizes On-State Losses
Low-Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Synchronous rectifiers
DC-DC converters
Primary side switching

Specifications & Technical Documents

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive Supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	54.7
P_D @T_A = +25°C (W)	2.2
P_D @T_C = +25°C (W)	78
R_DS(ON)Max@ V_GS(10V)(mΩ)	17.4 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	30.3 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	14.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	28.6 nC
C_ISS Typ (pF)	1986 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H017LPD.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2628	2023-05-11	2023-08-11	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products

DMT10H017LPD