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DMT10H032SDVW

100V Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Low R_DS(ON)– Ensures On-State Losses are Minimized
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An automotive-compliant part is available under separate datasheet (DMT10H032SDVWQ)

Application(s)

Wireless charging
DC-DC converters
Power management

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	6
P_D @T_A = +25°C (W)	2.3
R_DS(ON)Max@ V_GS(10V)(mΩ)	35 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	4.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	8 nC
C_ISS Typ (pF)	544 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H032SDVW.spice.txt

Recommended Soldering Techniques

TN1.pdf