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DMT10H032SDVWQ

100V Dual N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: wireless charging, DC-DC converters, power management.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Ensures On-State Losses are Minimized
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMT10H032SDVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Wireless charging
  • DC-DC converters
  • Power managements

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6
PD @TA = +25°C (W) 2.3
RDS(ON)Max@ VGS(10V)(mΩ) 35 mΩ
|VGS(TH)| Min (V) 2 V
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 4.5V (nC) 4.3 nC
QG Typ @ |VGS| = 10V (nC) 8 nC
CISS Typ (pF) 544 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf