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DMT10H075LE

100V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This N-channel MOSFET provides users with a competitive specification, offering efficient power-handling capability, high impedance, and is free from thermal runaway and thermally induced secondary breakdown.

Feature(s)

Low Gate Drive
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Load Switching
Uninterrupted Power Supply

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	4
P_D @T_C = +25°C (W)	2.4
R_DS(ON)Max@ V_GS(10V)(mΩ)	65 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	105 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	2.5 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	4.5 nC
C_ISS Typ (pF)	228 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H075LE.spice.txt

Recommended Soldering Techniques

TN1.pdf