100V N-Channel Enhancement Mode MOSFET
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This N-channel MOSFET provides users with a competitive specification, offering efficient power-handling capability, high impedance, and is free from thermal runaway and thermally induced secondary breakdown.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 100 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 4 |
| PD @TC = +25°C (W) | 2.4 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 65 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 105 mΩ |
| |VGS(TH)| Min (V) | 1 V |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 2.5 nC |
| QG Typ @ |VGS| = 10V (nC) | 4.5 nC |
| CISS Typ (pF) | 228 pF |
| CISS Condition @|VDS| (V) | 50 V |
