Diodes Incorporated — Analog and discrete power solutions
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DMT10H9M9LCT

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low Input Capacitance
  • High BVDSS Rating for Power Application
  • Low Input/Output Leakage
  • Lead-Free Finish; RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Motor Control
  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 101
PD @TA = +25°C (W) 2.3
PD @TC = +25°C (W) 156
RDS(ON)Max@ VGS(10V)(mΩ) 8.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 14 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 10V (nC) 40.2 nC
CISS Typ (pF) 2309 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC