120V N-CHANNEL ENHANCEMENT MODE MOSFET
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Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 120 V |
|VGS| (±V) | 20 ±V |
|IDS| @TC = +25°C (A) | 90 |
PD @TA = +25°C (W) | 2.9 |
PD @TC = +25°C (W) | 96 |
RDS(ON)Max@ VGS(10V)(mΩ) | 7.8 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 14.1 mΩ |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 10V (nC) | 49 nC |
CISS Typ (pF) | 3224 pF |
CISS Condition @|VDS| (V) | 60 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
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PCN-2439 | 2019-12-05 | 2020-03-05 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products |