Diodes Incorporated — Analog and discrete power solutions
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DMT12H060LCA9

115V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), making it ideal for high efficiency power management applications.

Feature(s)

  • Low Qg & Qgd
  • Small Footprint 1.5mm × 1.5mm
  • ESD Protection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery managements
  • Load switches
  • Battery protections

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 115 V
|VGS| (±V) 5.5 ±V
|IDS| @TA = +25°C (A) 3.5
PD @TA = +25°C (W) 1.9
RDS(ON)Max@ VGS(4.5V)(mΩ) 85 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 90 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.4 V
CISS Typ (pF) 560 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf