115V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), making it ideal for high efficiency power management applications.
AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 115 V |
|VGS| (±V) | 5.5 ±V |
|IDS| @TA = +25°C (A) | 3.5 |
PD @TA = +25°C (W) | 1.9 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 85 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 90 mΩ |
|VGS(TH)| Min (V) | 0.5 V |
|VGS(TH)| Max (V) | 1.4 V |
CISS Typ (pF) | 560 pF |
CISS Condition @|VDS| (V) | 50 V |