Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
PowerDI5060-8.png30V N-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20, 16 ±V |
| |IDS| @TA = +25°C (A) | 21 |
| |IDS| @TC = +25°C (A) | 140 |
| PD @TA = +25°C (W) | 2.7 |
| PD @TC = +25°C (W) | 113 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 3.8 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 6 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 10V (nC) | 43.7 nC |
| CISS Typ (pF) | 2370 pF |
| CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2439 | 2019-12-05 | 2020-03-05 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products |
| PCN-2403 | 2019-03-25 | 2019-06-19 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products. |
