DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 11, 14 |
| |IDS| @TC = +25°C (A) | 35, 50 |
| PD @TA = +25°C (W) | 1.7 |
| PD @TC = +25°C (W) | 30 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 11.1, 6 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 14, 10 mΩ |
| |VGS(TH)| Max (V) | 3, 3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 6.3, 8.4 nC |
| QG Typ @ |VGS| = 10V (nC) | 12.6, 16.7 nC |
| CISS Typ (pF) | 841, 1155 pF |
| CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
