Diodes Incorporated — Analog and discrete power solutions
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DMT3009LFVWQ

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Ensures On State Losses Are Minimized
  • 100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliable
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product
  • Wettable Flank for Improved Optical Inspection

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 12
|IDS| @TC = +25°C (A) 50
PD @TA = +25°C (W) 2.3
PD @TC = +25°C (W) 35.7
RDS(ON)Max@ VGS(10V)(mΩ) 11 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 13 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 5.8 nC
QG Typ @ |VGS| = 10V (nC) 12 nC
CISS Typ (pF) 823 pF
CISS Condition @|VDS| (V) 15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf