Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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DMT3020LFDFWQ

30V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in power-management functions and general-purpose interfacing switches.

Feature(s)

  • 6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Low Gate Threshold Voltage
  • Low On-Resistance
  • Wettable Flank for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMT3020LFDFWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power-management functions
  • General-purpose interfacing switches

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 8.4
|IDS| @TC = +25°C (A) -
PD @TA = +25°C (W) 1.8
PD @TC = +25°C (W) -
RDS(ON)Max@ VGS(10V)(mΩ) 17 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 28 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) - mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) - mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 3.6 nC
QG Typ @ |VGS| = 10V (nC) 7 nC
CISS Typ (pF) 393 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf