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DMT3020LFVW

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low RDS(ON) – Ensures On State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

Power Management Functions
Analog Switch

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	38
P_D @T_A = +25°C (W)	2
R_DS(ON)Max@ V_GS(10V)(mΩ)	17 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	28 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	3.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	7 nC
C_ISS Typ (pF)	393 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMT3020LFVW.spice.txt

Recommended Soldering Techniques

TN1.pdf