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DMT3020UFDB

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

6mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

General-purpose interfacing switches
Power-management functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	6.5
P_D @T_A = +25°C (W)	1.3
R_DS(ON)Max@ V_GS(10V)(mΩ)	21 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	30 mΩ
\|V_GS(TH)\| Max (V)	1.7 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	4.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	8.8 nC

Technical Documents

SPICE Model

DMT3020UFDB.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2690	2024-05-29	2024-08-29	Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.