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DMT3022UEV

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RD1RD2), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Ultra Low Gate Threshold Voltage
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Function
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

General Purpose Interfacing Switch
Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_C = +25°C (A)	17
P_D @T_A = +25°C (W)	1.8
R_DS(ON)Max@ V_GS(10V)(mΩ)	22 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	28 mΩ
\|V_GS(TH)\| Max (V)	1.8 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	6.9 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	13.9 nC
C_ISS Typ (pF)	903 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMT3022UEV.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.