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DMT35M8LDG

Asymmetric Dual N-Channel MOSFET

Datasheet

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Power management functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	17, 15.3
P_D @T_A = +25°C (W)	0.98
R_DS(ON)Max@ V_GS(10V)(mΩ)	4.7, 5.8 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	5.7, 7.3 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	1.9 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	14.5, 7.5 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	22.7, 16.3 nC
C_ISS Typ (pF)	1510, 1032 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMT35M8LDG.spice.txt

Recommended Soldering Techniques

TN1.pdf