Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMT3M70LPSWQ

30V N-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and load switches.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Thermally Efficient Package – Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses < 1.1mm Package Profile – Ideal for Thin Applications
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMT3M70LPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Body control electronics
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 61
|IDS| @TC = +25°C (A) 150
PD @TA = +25°C (W) 3.85
PD @TC = +25°C (W) -
RDS(ON)Max@ VGS(10V)(mΩ) 0.55 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 0.95 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) - mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) - mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 69.4 nC
QG Typ @ |VGS| = 10V (nC) 152.7 nC
CISS Typ (pF) 11112 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf