DMT6006SPSW

60V N-Channel Enhancement Mode MOSFET

Datasheet

Contact Sales

Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
High-Conversion Efficiency
Low R_DS(ON)— Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Synchronous rectifiers
DC-DC converters
Power management

Specifications & Technical Documents

Product Parameters

AEC Qualified	No
Compliance (Only Automotive Supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	98
P_D @T_A = +25°C (W)	2.45
P_D @T_C = +25°C (W)	89.3
R_DS(ON)Max@ V_GS(10V)(mΩ)	6.2 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	27.9 nC
C_ISS Typ (pF)	1721 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf