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DMT6010LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low R_DS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	14
P_D @T_A = +25°C (W)	2
R_DS(ON)Max@ V_GS(10V)(mΩ)	8 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	12 mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	19.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	41.3 nC
C_ISS Typ (pF)	2090 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMT6010LSS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products