60V N-CHANNEL ENHANCEMENT MODE MOSFET
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AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 9.5 |
PD @TA = +25°C (W) | 1.9 |
PD @TC = +25°C (W) | 11 |
RDS(ON)Max@ VGS(10V)(mΩ) | 14 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 21 mΩ |
|VGS(TH)| Max (V) | 2.3 V |
QG Typ @ |VGS| = 4.5V (nC) | 7.3 nC |
QG Typ @ |VGS| = 10V (nC) | 13.6 nC |
CISS Typ (pF) | 785 pF |
CISS Condition @|VDS| (V) | 30 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |