Diodes Incorporated — Analog and discrete power solutions
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DMT6015LPDW

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Thermally Efficient Package-Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Wireless Charging
  • DC-DC Converters
  • Power Management

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 16 ±V
|IDS| @TA = +25°C (A) 9.4
|IDS| @TC = +25°C (A) 17.1
PD @TA = +25°C (W) 2.4
PD @TC = +25°C (W) 7.9
RDS(ON)Max@ VGS(10V)(mΩ) 18 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 24.5 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 8.6 nC
QG Typ @ |VGS| = 10V (nC) 15.7 nC
CISS Typ (pF) 808 pF
CISS Condition @|VDS| (V) 30 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC