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DMT6015LPDW

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Wireless Charging
DC-DC Converters
Power Management

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	16 ±V
\|I_DS\| @T_A = +25°C (A)	9.4
\|I_DS\| @T_C = +25°C (A)	17.1
P_D @T_A = +25°C (W)	2.4
P_D @T_C = +25°C (W)	7.9
R_DS(ON)Max@ V_GS(10V)(mΩ)	18 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	24.5 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	8.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	15.7 nC
C_ISS Typ (pF)	808 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMT6015LPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile