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DMT64M8LSS

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production—
Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON)—Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

High Frequency Switching
Synchronous Rectification
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	17
P_D @T_A = +25°C (W)	2.2
R_DS(ON)Max@ V_GS(10V)(mΩ)	5 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	6.9 mΩ
\|V_GS(TH)\| Max (V)	2.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	26.1 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	47.5 nC
C_ISS Typ (pF)	2664 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMT64M8LSS.spice.txt

Recommended Soldering Techniques

TN1.pdf