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DMT67M8LPSW

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_{DS(ON) —}Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Wettable Flank for Improved Optical Inspection
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Synchronous rectifiers
DC-DC converters
Power management

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	17.3
\|I_DS\| @T_C = +25°C (A)	82
P_D @T_A = +25°C (W)	2.8
P_D @T_C = +25°C (W)	62.5
R_DS(ON)Max@ V_GS(10V)(mΩ)	6.2 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	8.5 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	37.5 nC
C_ISS Typ (pF)	2130 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMT67M8LPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2439	2019-12-05	2020-03-05	Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products